IRFP150N HEXFET Power MOSFET transistor 100V 42A 175C

Type Designator: IRFP150N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 39 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 73.3 nC

Drain-Source Capacitance (Cd): 1900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TO247