IRFP250N HEXFET Power MOSFET Transistor 200V 30A

Type Designator: IRFP250N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Total Gate Charge (Qg): 123 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO247AC