IRF740P N-Channel MOSFET Transistor 10A

·         N-Channel Power MOSFET

·         Continuous Drain Current (ID): 10A

·         Gate threshold voltage (VGS-th) is 10V (limit = ±20V)

·         Drain to Source Breakdown Voltage: 400V

·         Drain Source Resistance (RDS) is 0.55 Ohms

·         Rise time and fall time is 27nS and 24nS

·         Available in To-220 package